Характеристики транзистора 2sc5200

Datasheet Download — Unisonic Technologies

Номер произв 2SC3320
Описание HIGH VOLTAGE HIGH SPEED SWITCHING
Производители Unisonic Technologies
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UNISONIC TECHNOLOGIES CO.,LTD
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
HIGH SPEED
SWITCHING

 FEATURES

* High voltage, high speed switching
* High reliability

 ORDERING INFORMATION

Ordering Number
Lead Free
Halogen Free
Package
2SC3320L-x-T3P-T
2SC3320L-x-T3P-T
TO-3P
2SC3320L-x-T3N-T
2SC3320L-x-T3N-T
TO-3PN
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
BCE
Packing
Tube
Tube

 MARKING INFORMATION

PACKAGE
TO-3P
TO-3PN
MARKING
www.unisonic.com.tw
Copyright 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R214-008.E

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2SC3320
NPN EPITAXIAL SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TC = 25°C)

PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage

VCBO

VCEO

VCEO(SUS)

VEBO

500
400
400
7
V
V
V
V
Collector Current
Base Current

IC 15 A

IB 5 A

Power Dissipation
Junction Temperature

PD 80 W

TJ

+150
°C
Storage Temperature

TSTG

-40 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER
Junction to Case
SYMBOL

θJC

RATINGS
1.55

 ELECTRICAL SPECIFICATIONS (TC =25°C, Unless Otherwise Specified.)

UNIT
°C/W
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL

VCBO

VCEO

VCEO(SUS)

VEBO

VCE (SAT)

VBE (SAT)

ICBO

IEBO

hFE

tON

tSTG

tF

TEST CONDITIONS

ICBO=1mA

ICEO=10mA

IC=0.2A

IEBO=1mA

IC=6A, IB=1.2A

VCBO=500V

VEBO=7V

IC=6A, VCE=5V

IC=7.5A, IB1 =1.5A, IB2=-3A

RL=20Ω, PW=20μs, Duty ≤ 2%

MIN TYP MAX UNIT
500 V
400 V
400 V
7V
1V
1.5 V
1 mA
1 mA
10 45

0.5 μs

1.5 μs

0.15 μs

 CLASSIFICATION OF hFE

RANK
RANGE
A
10~15
B
15~20
C
20~25
D
25~30
E
30~35
F
35~45
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R214-008.E

No Preview Available !

2SC3320

 SWITCHING TIME TEST CIRCUIT

NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R214-008.E

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